首页 >2SK3147(L)|2SK3147(S)>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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SiliconNChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistanceRDS=0.1Ωtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
N-Channel100-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SiliconNChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS=0.1Ωtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel100V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
SiliconNCannelMOSFET Features Lowon-resistance RDS=0.1typ. Highspeedswitching 4Vgatedrivedevicecanbedrivenfrom5Vsource | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
SiliconNChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistanceRDS=0.1Ωtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
N-Channel100V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
SiliconNChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS=0.1Ωtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
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